ON NDB6020P

P 通道20 V24A（Tc）1V @ 250µA60W（Tc）-65°C ~ 175°C（TJ）表面贴装型

Overview

The NDB5060L is MOSFET N-CH 60V 26A D2PAK, that includes Reel Packaging, they are designed to operate with a 0.046296 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 68 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 65 C, and the Fall Time is 102 ns, and Rise Time is 200 ns, and the Vgs Gate Source Voltage is 16 V, and Id Continuous Drain Current is 26 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 42 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 45 ns, and the Typical Turn On Delay Time is 13 ns, and Channel Mode is Enhancement.

NDB6020 with circuit diagram manufactured by FSC. The NDB6020 is available in TO263 Package, is part of the FETs - Single.

Features

• Critical DC electrical parameters are specified at elevated temperatures.

• The rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• 175°C maximum junction temperature rating.

• High-density cell design for extremely low RDS(ON).

• TO-220 and TO-263 (D2PAK) packages for both through-hole and surface mount applications.

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial