ON IRLM220ATF

N 通道200 V1.13A（Ta）2W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10 μA (Max.) @ VDS = 200 V

Lower RDS(on) : 0.609 Ω (Typ.)

Applications

• General-purpose amplifier

• Switching applications

• Power management

• Industrial