ON IRFU120ATU

N 通道100 V8.4A（Tc）4V @ 250µA2.5W（Ta），32W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The IRFU1205PBF is MOSFET N-CH 55V 44A I-PAK, that includes Tube Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as IPAK-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 69 W, the device is offered in 20 V Vgs Gate Source Voltage, the device has a 37 A of Id Continuous Drain Current, and Vds Drain Source Breakdown Voltage is 55 V, and the Rds On Drain Source Resistance is 27 mOhms, and Transistor Polarity is N-Channel, and the Qg Gate Charge is 43.3 nC.

The IRFU120A is MOSFET N-CH 100V 8.4A IPAK manufactured by IR. The IRFU120A is available in TO-251-3 Short Leads, IPak, TO-251AA Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 8.4A IPAK.

Features

Tube Package
a continuous drain current (ID) of 8.4A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 36 ns

Through Hole Mounting Type

Applications

There are a lot of ON Semiconductor
IRFU120ATU applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching