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FQT1N80TF-WS

ON FQT1N80TF-WS

N 通道800 V200mA(Tc)5V @ 250µA2.1W(Tc)-55°C ~ 150°C(TJ)表面贴装型

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FQT1N80TF-WS
MOSFET N-CH 800V 200MA SOT223-3
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¥4.00

价格更新:一个月前

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产品详情

Overview

FQT1N60CTF_WS with pin details, that includes QFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.006632 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-261-4, TO-261AA, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a SOT-223-4 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 2.1W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 600V, and the Input Capacitance Ciss Vds is 170pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 200mA (Tc), and Rds On Max Id Vgs is 11.5 Ohm @ 100mA, 10V, and the Vgs th Max Id is 4V @ 250μA, and Gate Charge Qg Vgs is 6.2nC @ 10V, and the Pd Power Dissipation is 2.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 27 ns, and the Rise Time is 21 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 200 mA, and Vds Drain Source Breakdown Voltage is 600 V, and the Rds On Drain Source Resistance is 11.5 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 13 ns, and Typical Turn On Delay Time is 7 ns, and the Channel Mode is Enhancement.

FQT1N80 with EDA / CAD Models manufactured by FAIRCHILD. The FQT1N80 is available in SOT-223 Package, is part of the FETs - Single.

Features

QFET® Series
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 15 ns
a threshold voltage of 5V

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
FQT1N80TF-WS applications of single MOSFETs transistors.

  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
产品属性
全选
型号系列: QFET®
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 800 V
25°C 时电流 - 连续漏极 (Id): 200mA(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 20 欧姆 @ 100mA,10V
漏极电流下的最大栅极阈值电压: 5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 7.2 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 195 pF @ 25 V
最大功率耗散: 2.1W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: SOT-223-3
封装/外壳: TO-261-3
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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