ON FQP50N06L-EPKE0003

N 通道60 V52.4A（Tc）2.5V @ 250µA121W（Tc）-55°C ~ 175°C（TJ）通孔

Overview

The FQP50N06 is MOSFET N-CH 60V 50A TO-220, that includes Tube Packaging, they are designed to operate with a FQP50N06_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.063493 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 120 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 65 ns, and the Rise Time is 105 ns, and Vgs Gate Source Voltage is 25 V, and the Id Continuous Drain Current is 50 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 22 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 60 ns, and Typical Turn On Delay Time is 15 ns, and the Forward Transconductance Min is 22 S, and Channel Mode is Enhancement.

FQP50N06C with EDA / CAD Models manufactured by Fairchild. The FQP50N06C is available in TO-220 Package, is part of the IC Chips.

Features

QFET® Series
Tube Package
MOSFET (Metal Oxide) Technology
60 V Drain to Source Voltage (Vdss)
52.4A (Tc) Current - Continuous Drain (Id) @ 25°C
5V, 10V Drive Voltage (Max Rds On, Min Rds On)
21mOhm @ 26.2A, 10V Rds On (Max) @ Id, Vgs
2.5V @ 250µA Vgs(th) (Max) @ Id
32 nC @ 5 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1630 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
121W (Tc) Power Dissipation (Max)
Through Hole Mounting Type