ON FQP19N20-T

N 通道200 V19.4A（Tc）5V @ 250µA140W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The FQP19N20C is MOSFET N-CH 200V 19A TO-220, that includes Tube Packaging, they are designed to operate with a FQP19N20C_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.063493 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 139 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 115 ns, and the Rise Time is 150 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 19 A, and Vds Drain Source Breakdown Voltage is 200 V, and the Rds On Drain Source Resistance is 170 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 135 ns, and Typical Turn On Delay Time is 15 ns, and the Forward Transconductance Min is 10.8 S, and Channel Mode is Enhancement.

The FQP19N20L is MOSFET N-CH 200V 21A TO-220 manufactured by FAIRCHILD. The FQP19N20L is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 200V 21A TO-220, N-Channel 200V 21A (Tc) 140W (Tc) Through Hole TO-220-3.

Features

QFET® Series
Tube Package
MOSFET (Metal Oxide) Technology
200 V Drain to Source Voltage (Vdss)
19.4A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
150mOhm @ 9.7A, 10V Rds On (Max) @ Id, Vgs
5V @ 250µA Vgs(th) (Max) @ Id
40 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
1600 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
140W (Tc) Power Dissipation (Max)
Through Hole Mounting Type