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FQD4P25TM-WS

ON FQD4P25TM-WS

P 通道250 V3.1A(Tc)5V @ 250µA2.5W(Ta),45W(Tc)-55°C ~ 150°C(TJ)表面贴装型

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onsemi
FQD4P25TM-WS
MOSFET P-CH 250V 3.1A DPAK
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¥8.84

价格更新:一个月前

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产品详情

Overview

FQD4P25TM_WS with pin details, that includes Reel Packaging, they are designed to operate with a 0.009184 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 P-Channel, the device is offered in 45 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 27 ns, and Rise Time is 60 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 3.1 A, and the Vds Drain Source Breakdown Voltage is - 250 V, and Rds On Drain Source Resistance is 2.1 Ohms, and the Transistor Polarity is P-Channel, and Typical Turn Off Delay Time is 14 ns, and the Typical Turn On Delay Time is 9.5 ns, and Channel Mode is Enhancement.

The FQD4P25TM is MOSFET P-CH 250V 3.1A DPAK manufactured by FSC. The FQD4P25TM is available in TO-252-3, DPak (2 Leads + Tab), SC-63 Package, is part of the FETs - Single, , and with support for MOSFET P-CH 250V 3.1A DPAK, Trans MOSFET P-CH 250V 3.1A 3-Pin(2+Tab) DPAK T/R.

Features

QFET® Series
the avalanche energy rating (Eas) is 280 mJ
a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of -250V voltage
the turn-off delay time is 14 ns
a 250V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
FQD4P25TM-WS applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
产品属性
全选
型号系列: QFET®
包装: 卷带(TR)
部件状态: 停产
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 250 V
25°C 时电流 - 连续漏极 (Id): 3.1A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 2.1 欧姆 @ 1.55A,10V
漏极电流下的最大栅极阈值电压: 5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 14 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 420 pF @ 25 V
最大功率耗散: 2.5W(Ta),45W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: TO-252AA
封装/外壳: TO-252-3,DPak(2 引线 + 接片),SC-63
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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