ON FDS7779Z

P 通道30 V16A（Ta）3V @ 250µA2.5W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

General Description  This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.  These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • –16 A, –30 V. RDS(ON) = 7.2 mΩ @ VGS = –10 V RDS(ON) = 11.5 mΩ @ VGS = – 4.5 V • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability

Features

PowerTrench® Series
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 100 ns
a 30V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications

There are a lot of ON Semiconductor
FDS7779Z applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies