ON FDS6679AZ

P 通道30 V13A（Ta）3V @ 250µA2.5W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

Features

• Max rDS(on) = 9.3mΩat VGS = -10V, ID = -13A

• Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A

• Extended VGS range (-25V) for battery applications

• HBM ESD protection level of 6kV typical (note 3)

• High-performance trench technology for extremely lowrDS(on)

• High power and current handling capability

Applications

• Notebook Computers

• Portable Battery Packs

• Datacom module

• Wired networking

• Wearables (non-medical)