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FDPF7N50

ON FDPF7N50

N 通道500 V7A(Tc)5V @ 250µA39W(Tc)-55°C ~ 150°C(TJ)通孔

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onsemi
FDPF7N50
MOSFET N-CH 500V 7A TO220F
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¥1.07

价格更新:一个月前

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产品详情

Overview

The FDPF770N15A is MOSFET N-CH 150V 10A TO-220F, that includes Tube Packaging, they are designed to operate with a 0.080072 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 20 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device is offered in 10 A Id Continuous Drain Current, the device has a 150 V of Vds Drain Source Breakdown Voltage, and Rds On Drain Source Resistance is 60 mOhms, and the Transistor Polarity is N-Channel.

The FDPF79N15 is MOSFET N-CH 150V 79A TO-220F manufactured by FAIRCHILD. The FDPF79N15 is available in TO220F Package, is part of the FETs - Single, , and with support for MOSFET N-CH 150V 79A TO-220F, N-Channel 150V 79A (Tc) 38W (Tc) Through Hole TO-220F.

Features

UniFET™ Series


  • 7A, 500V, RDS(on) = 0.9|? @VGS = 10 V

  • Low gate charge ( typical 12.8 nC)

  • Low Crss ( typical 9 pF)

  • Fast switching

  • 100% avalanche tested

  • Improved dv/dt capability



Through Hole Mounting Type

Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


产品属性
全选
型号系列: UniFET™
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 500 V
25°C 时电流 - 连续漏极 (Id): 7A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 900 毫欧 @ 3.5A,10V
漏极电流下的最大栅极阈值电压: 5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 16.6 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 940 pF @ 25 V
最大功率耗散: 39W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220F-3
封装/外壳: TO-220-3 整包
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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