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FDP15N50

ON FDP15N50

N 通道500 V15A(Tc)4V @ 250µA300W(Tc)-55°C ~ 175°C(TJ)通孔

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onsemi
FDP15N50
MOSFET N-CH 500V 15A TO220-3
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产品详情

Overview

The FDP15N40 is MOSFET N-CH 400V 15A TO-220, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 170 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 40 ns, and Rise Time is 55 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 15 A, and the Vds Drain Source Breakdown Voltage is 400 V, and Rds On Drain Source Resistance is 300 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 72 ns, and the Typical Turn On Delay Time is 26 ns, and Channel Mode is Enhancement.

The FDP150N10A is MOSFET N-CH 100V 50A TO-220-3 manufactured by FAIRCHILD. The FDP150N10A is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 50A TO-220-3, N-Channel 100V 50A (Tc) 91W (Tc) Through Hole TO-220-3.

Features

Tube Package


  • Low gate charge Qg results in a simple drive requirement(Typ. 33 nC)

  • Improved Gate, avalanche, and high re-applied dv/dt ruggedness

  • Reduced RDS(on) ( 330m? ( Typ.) @ VGS = 10 V, ID = 7.5 A)

  • Reduced Miller capacitance and low Input capacitance(Typ. Crss = 16 pF)

  • Improved switching speed with low EMI

  • 175?? rated junction temperature



Through Hole Mounting Type

Applications


  • Lighting

  • Uninterruptible Power Supply

  • AC-DC Power Supply

  • Power factor correction (PFC)

  • Flat panel display (FPD) TV power

  • ATX and electronic lamp ballasts


产品属性
全选
包装: 管件
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 500 V
25°C 时电流 - 连续漏极 (Id): 15A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 380 毫欧 @ 7.5A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 41 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 1850 pF @ 25 V
最大功率耗散: 300W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220-3
封装/外壳: TO-220-3
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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