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FDN372S

ON FDN372S

N 通道30 V2.6A(Ta)3V @ 1mA500mW(Ta)-55°C ~ 150°C(TJ)表面贴装型

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FDN372S
MOSFET N-CH 30V 2.6A SUPERSOT3
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产品详情

Overview

The FDN371N is MOSFET 20V N-Ch PowerTrench, that includes PowerTrench Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a FDN371N_NL, that offers Unit Weight features such as 0.001058 oz, Mounting Style is designed to work in SMD/SMT, as well as the SSOT-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 500 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 9 ns, and Rise Time is 9 ns, and the Vgs Gate Source Voltage is 12 V, and Id Continuous Drain Current is 2.5 A, and the Vds Drain Source Breakdown Voltage is 20 V, and Rds On Drain Source Resistance is 22 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 17 ns, and the Typical Turn On Delay Time is 7 ns, and Forward Transconductance Min is 16 S, and the Channel Mode is Enhancement.

FDN371N-NL with circuit diagram manufactured by FAIRCHILD. The FDN371N-NL is available in SOT-23 Package, is part of the IC Chips.

Features

PowerTrench® Series


  • 21 A, 30 V. RDS(ON) = 3.9 m? @ VGS = 10 V  

  •                      RDS(ON) = 5.1 m? @ VGS = 4.5 V 

  • Low gate charge

  • Fast switching speed

  • High-performance trench technology for extremely low RDS(ON)



Surface Mount Mounting Type

Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Motor Drives


产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 30 V
25°C 时电流 - 连续漏极 (Id): 2.6A(Ta)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 40 毫欧 @ 2.6A,10V
漏极电流下的最大栅极阈值电压: 3V @ 1mA
最大栅极电荷 (Qg) @ Vgs: 8.1 nC @ 5 V
最大栅极源电压: ±16V
Vds 时的最大输入电容 (Ciss): 630 pF @ 15 V
最大功率耗散: 500mW(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: SOT-23-3
封装/外壳: TO-236-3,SC-59,SOT-23-3
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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