ON FDMT80060DC

N 通道60 V43A（Ta），292A（Tc）4.5V @ 250µA3.2W（Ta），156W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Features

At VGS = 10 V, ID = 43 A, the maximum rDs(on) is 1.1 mQ.

At Vgs = 8 V, Id = 37 A, MaxDs(on)= 1.3 mQ.

Combination of advanced package and silicon for low rDS(on) and high efficiency

Engineered for gentle r ecovery, next generation enhanced body diode technology

8x8 mm MLP package with low profile

MSL1 is a strong package design.

UIL was tested to the nth degree.

RoHS (Restriction of Hazardous Substances) Compliant

Applications

Load Switching / OringFET

Synchronous Rectification 

DC-DC Convergence