ON FDMT800150DC

N 通道150 V15A（Ta），99A（Tc）4V @ 250µA3.2W（Ta），156W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel MOSFET is produced using an advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

Features

Low profile 8x8mm MLP package

Next-generation enhanced body diode technology, engineered for soft recovery

MSL1 robust package design

Advanced Package and Silicon combination for low rDS(on) and high efficiency

Max rDS(on) = 8.4 mΩ at VGS = 6 V, ID = 13 A

Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 15 A

RoHS Compliant

100% UIL tested

Applications

Oring FET / Load Switch

MCU

Synchronous Rectification

DC-DC Conversion

Arduino

Lighting