ON FDMS7681

N 通道30 V14A（Ta），28A（Tc）3V @ 250µA2.5W（Ta），33W（Tc）-55°C ~ 150°C（TJ）表面贴装型

Overview

The FDMS7680 is MOSFET N-CH 30V 14A POWER56, that includes Reel Packaging, they are designed to operate with a 0.002402 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as Power-56-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 2.5 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 3 ns, and Rise Time is 4 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 14 A, and the Vds Drain Source Breakdown Voltage is 30 V, and Rds On Drain Source Resistance is 6.9 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 21 ns, and the Typical Turn On Delay Time is 10 ns, and Forward Transconductance Min is 85 S, and the Channel Mode is Enhancement.

FDMS7680TR with circuit diagram manufactured by FAIRCHILD. The FDMS7680TR is available in 8-PQFN, Power56 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 30V 14A POWER56.

Features

PowerTrench® Series
Bulk Package
MOSFET (Metal Oxide) Technology
30 V Drain to Source Voltage (Vdss)
14A (Ta), 28A (Tc) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
6.9mOhm @ 14A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
28 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
1850 pF @ 15 V Input Capacitance (Ciss) (Max) @ Vds
2.5W (Ta), 33W (Tc) Power Dissipation (Max)
Surface Mount Mounting Type