ON FDMS7608S

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V12A，15A10 毫欧 @ 12A，10V3V @ 250µA

Overview

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies. The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

Features

• At VGS = 10 V and lD = 12 A, the maximum r??s(on) is md.

• Maximum ros(on) = 13.6 mQ at 4.5 V, lD = 10 A Q2: N-Channel

• Maximum r??g(on) is 6.3 mil at 10 V and 15 A for Vgs.

• Maximum rDS(on) is 7.2 mQ at 4.5 V and 13 A.

• REACH Compliant

Applications

• Computing

• Communications

• Point of Load for General Purpose

• VCORE Notebook