ON FDMS3669S

MOSFET（金属氧化物）逻辑电平门2 N 沟道（双）非对称型30V13A，18A10 毫欧 @ 13A，10V2.7V @ 250µA

Overview

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.

Features

• Maximum rDS(on) at VGS = 10 V, ID = 18 A is 5 m.

• Max rDS(on) is 5.2 m at 4.5 V and 17 A.

• Shorter rise/fall times due to low inductance packing reduce switching losses.

• The best architecture for lower circuit inductance and less switch node ringing is made possible by MOSFET integration.

• Conforms to RoHS

Applications

• Computing 

• Communications

• Point of Load for All Purposes

• Laptop VCORE