Fairchild FDMS3668S

MOSFET（金属氧化物）逻辑电平门2 N 沟道（双）非对称型30V13A，18A8 毫欧 @ 13A，10V2.7V @ 250µA

Overview

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N-Channel

Max rDS(on) = 8 m|? at VGS = 10 V, ID = 13 A

Max rDS(on) = 11 m|? at VGS = 4.5 V, ID = 11 A

Q2: N-Channel

Max rDS(on) = 5 m|? at VGS = 10 V, ID = 18 A

Max rDS(on) = 5.2 m|? at VGS = 4.5 V, ID = 17 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switching node ringing

RoHS Compliant

Applications

FDMS3668S            Applications

Notebook PC