ON FDMS3660S

MOSFET（金属氧化物）逻辑电平门2 N 沟道（双）非对称型30V30A，60A8 毫欧 @ 13A，10V2.7V @ 250µA

Overview

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Features

Q1: N?Channel

? Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A

? Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 A

Q2: N?Channel

? Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A

? Max rDS(on) = 2.2 m at VGS = 4.5 V, ID = 27 A

? Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

? MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing

? These Devices are Pb?Free and are RoHS Compliant

Applications

? Computing

? Communications

? General Purpose Point of Load

? Notebook VCORE