ON FDMS7602S

MOSFET（金属氧化物）逻辑电平门2 N-通道（双）30V12A，17A7.5 毫欧 @ 12A，10V3V @ 250µA

Overview

This device includes two specialized N-Channel MOSFETs in a dual MLP package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

Features

• Max DS(on) = 7.5 mQ at 10 V, Vgg, and 12 A

• Max DS(on) = 12 mQ at 4.5 V VGS, 10 A lD Q2: N-Channel

• Max DS(on) = 5.0 mQ at 10 V VGS and 17 A lD

• Maximum rDs(on) is 6.8 mQ at 4.5 V, lD, and VGS.

Applications

• Computing

• Communications

• Point of Load for General Purpose