ON FDMS3686S

MOSFET（金属氧化物）逻辑电平门2 N 沟道（双）非对称型30V13A，23A8 毫欧 @ 13A，10V2.7V @ 250µA

Overview

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.

Features

PowerTrench® Series
Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
Logic Level Gate FET Feature
30V Drain to Source Voltage (Vdss)
13A, 23A Current - Continuous Drain (Id) @ 25°C
8mOhm @ 13A, 10V Rds On (Max) @ Id, Vgs
2.7V @ 250µA Vgs(th) (Max) @ Id
29nC @ 10V Gate Charge (Qg) (Max) @ Vgs
1785pF @ 10V Input Capacitance (Ciss) (Max) @ Vds
1W Power - Max
Surface Mount Mounting Type
Power56 Supplier Device Package