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FDFME3N311ZT

ON FDFME3N311ZT

N 通道30 V1.8A(Ta)1.5V @ 250µA1.4W(Ta)-55°C ~ 150°C(TJ)表面贴装型

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onsemi
FDFME3N311ZT
MOSFET N-CH 30V 1.8A 6MICROFET
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价格更新:一个月前

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产品详情

Overview

The FDFME2P823ZT is MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode, that includes Reel Packaging, they are designed to operate with a 0.000889 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as microFET-6, Technology is designed to work in Si, as well as the 2 Channel Number of Channels, the device can also be used as Single with Schottky Diode Configuration. In addition, the Transistor Type is 2 P-Channel, the device is offered in 1.3 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 16 ns, and Rise Time is 4.8 ns, and the Vgs Gate Source Voltage is +/- 8 V, and Id Continuous Drain Current is - 2.3 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Vgs th Gate Source Threshold Voltage is - 0.6 V, and the Rds On Drain Source Resistance is 95 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 33 ns, and Typical Turn On Delay Time is 4.7 ns, and the Qg Gate Charge is 5.5 nC, and Forward Transconductance Min is 7 S.

FDFMA3W109 with circuit diagram manufactured by FAIRCHILD. The FDFMA3W109 is available in QFN Package, is part of the IC Chips.

Features

PowerTrench® Series
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 22 ns
a threshold voltage of 1V

Surface Mount Mounting Type

Applications


There are a lot of ON Semiconductor
FDFME3N311ZT applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
场效应管类型: N 通道
技术: MOSFET(金属氧化物)
漏极至源极电压 (Vdss): 30 V
电流 - 连续漏极 (Id) @ 25°C: 1.8A(Ta)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 2.5V,4.5V
漏极电流和栅极至源极电压下的最大导通电阻: 299mOhm @ 1.6A,4.5V
漏极电流下的最大栅极阈值电压: 1.5V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 1.4 nC @ 4.5 V
最大栅极源电压: ±12V
Vds 时的最大输入电容 (Ciss): 75 pF @ 15 V
FET 功能: 肖特基二极管(隔离式)
最大功率耗散: 1.4W(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商 设备封装: 6-MicroFET(1.6x1.6)
包装 / 盒: 6-UFDFN 裸露焊盘
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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