ON FDD8586

N 通道20 V35A（Tc）2.5V @ 250µA77W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

The FDD850N10L is MOSFET N-CH 100V 15.7A DPAK-3, that includes Reel Packaging, they are designed to operate with a 0.009184 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 50 W, it has an Maximum Operating Temperature range of + 175 C, the device has a 15.7 A of Id Continuous Drain Current, and Vds Drain Source Breakdown Voltage is 100 V, and the Rds On Drain Source Resistance is 64 mOhms, and Transistor Polarity is N-Channel, and the Qg Gate Charge is 22.2 nC, and Forward Transconductance Min is 31 S.

The FDD8580 is MOSFET N-CH 20V 35A DPAK manufactured by FAIRCHILD. The FDD8580 is available in TO-252-3, DPak (2 Leads + Tab), SC-63 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 20V 35A DPAK, N-Channel 20V 35A (Tc) 49.5W (Tc) Surface Mount D-PAK (TO-252AA).

Features

PowerTrench® Series
a continuous drain current (ID) of 35A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 47 ns
a threshold voltage of 1.6V

Surface Mount Mounting Type

Applications

There are a lot of ON Semiconductor
FDD8586 applications of single MOSFETs transistors.

• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching