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FDD45AN06LA0

ON FDD45AN06LA0

N 通道60 V5.2A(Ta),25A(Tc)3V @ 250µA55W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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onsemi
FDD45AN06LA0
MOSFET N-CH 60V 5.2A/25A TO252AA
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¥1.05

价格更新:一个月前

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产品详情

Overview

The FDD4243 is MOSFET P-CH 40V 6.7A DPAK, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.009184 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, DPak (2 Leads + Tab), SC-63, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a TO-252 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 3W, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 40V, and the Input Capacitance Ciss Vds is 1550pF @ 20V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 6.7A (Ta), 14A (Tc), and Rds On Max Id Vgs is 44 mOhm @ 6.7A, 10V, and the Vgs th Max Id is 3V @ 250μA, and Gate Charge Qg Vgs is 29nC @ 10V, and the Pd Power Dissipation is 42 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 7 ns, and the Rise Time is 15 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 6.7 A, and Vds Drain Source Breakdown Voltage is - 40 V, and the Rds On Drain Source Resistance is 44 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 22 ns, and Typical Turn On Delay Time is 6 ns, and the Forward Transconductance Min is 16 S, and Channel Mode is Enhancement.

FDD45AN06A0 with circuit diagram manufactured by FAIRCHILD. The FDD45AN06A0 is available in TO-252(DPAK) Package, is part of the IC Chips.

Features

PowerTrench® Series


? rDS(ON) = 39m? (Typ.), VGS = 5V, ID = 22A

? Qg(tot) = 8.3nC (Typ.), VGS = 5V

? Low Miller Charge

? Low QRR Body Diode

? UIS Capability (Single Pulse and Repetitive Pulse)

? Qualified to AEC Q101

Formerly developmental type 83535

 

Surface Mount Mounting Type

Applications


? Motor / Body Load Control

? ABS Systems

? Powertrain Management

? Injection Systems

? DC-DC converters and Off-line UPS

? Distributed Power Architectures and VRMs

? Primary Switch for 12V and 24V systems


产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 5.2A(Ta),25A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 36 毫欧 @ 25A,10V
漏极电流下的最大栅极阈值电压: 3V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 11 nC @ 5 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 880 pF @ 25 V
最大功率耗散: 55W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: TO-252AA
封装/外壳: TO-252-3,DPak(2 引线 + 接片),SC-63
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