ON FDC5661N

N 通道60 V4.3A（Ta）3V @ 250µA1.6W（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

The FDC5614P is MOSFET P-CH 60V 3A SSOT-6, that includes Reel Packaging, they are designed to operate with a FDC5614P_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.001270 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SSOT-6, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single Quad Drain, the device is offered in 1 P-Channel Transistor Type, the device has a 1.6 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 10 ns, and the Rise Time is 10 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 3 A, and Vds Drain Source Breakdown Voltage is - 60 V, and the Rds On Drain Source Resistance is 105 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 19 ns, and Typical Turn On Delay Time is 7 ns, and the Forward Transconductance Min is 8 S, and Channel Mode is Enhancement.

FDC5614P-NL with circuit diagram manufactured by FAIRCHILD. The FDC5614P-NL is available in TSOP-6 Package, is part of the IC Chips.

Features

PowerTrench® Series
Bulk Package
MOSFET (Metal Oxide) Technology
60 V Drain to Source Voltage (Vdss)
4.3A (Ta) Current - Continuous Drain (Id) @ 25°C
4.5V, 10V Drive Voltage (Max Rds On, Min Rds On)
47mOhm @ 4.3A, 10V Rds On (Max) @ Id, Vgs
3V @ 250µA Vgs(th) (Max) @ Id
19 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
763 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
1.6W (Ta) Power Dissipation (Max)
Surface Mount Mounting Type