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FDC3616N

ON FDC3616N

N 通道100 V3.7A(Ta)4V @ 250µA2W(Ta)-55°C ~ 150°C(TJ)表面贴装型

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FDC3616N
MOSFET N-CH 100V 3.7A SUPERSOT6
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¥0.92

价格更新:一个月前

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产品详情

Overview

The FDC3601N is MOSFET 2N-CH 100V 1A SSOT-6, that includes PowerTrenchR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a FDC3601N_NL, that offers Unit Weight features such as 0.001270 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-23-6 Thin, TSOT-23-6 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is SuperSOT?-6, and the Configuration is Dual, and FET Type is 2 N-Channel (Dual), and the Power Max is 700mW, and Transistor Type is 2 N-Channel, and the Drain to Source Voltage Vdss is 100V, and Input Capacitance Ciss Vds is 153pF @ 50V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 1A, and the Rds On Max Id Vgs is 500 mOhm @ 1A, 10V, and Vgs th Max Id is 4V @ 250μA, and the Gate Charge Qg Vgs is 5nC @ 10V, and Pd Power Dissipation is 960 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 4 ns, and Rise Time is 4 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 1 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Rds On Drain Source Resistance is 500 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 11 ns, and the Typical Turn On Delay Time is 8 ns, and Forward Transconductance Min is 3.6 S, and the Channel Mode is Enhancement.

FDC3612-NL with EDA / CAD Models manufactured by FAIRCHILD. The FDC3612-NL is available in SSOT6L Package, is part of the IC Chips.

Features

PowerTrench® Series

3.7 A, 100 V. RDS(ON) = 70 m? @ VGS = 10 V

RDS(ON) = 80 m? @ VGS = 6.0 V

High performance trench technology for extremely

low RDS(ON)

Low gate charge (23nC typical)

High power and current handling capability

Fast switching speed. 



Surface Mount Mounting Type

Applications

DC/DC converter

Load Switching 



产品属性
全选
型号系列: PowerTrench®
包装: 卷带(TR)
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 100 V
25°C 时电流 - 连续漏极 (Id): 3.7A(Ta)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 6V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 70 毫欧 @ 3.7A,10V
漏极电流下的最大栅极阈值电压: 4V @ 250µA
最大栅极电荷 (Qg) @ Vgs: 32 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 1215 pF @ 50 V
最大功率耗散: 2W(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: SuperSOT™-6 FLMP
封装/外壳: 6-SSOT 扁平引线,SuperSOT™-6 FLMP
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onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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