ON FCA76N60N

N 通道600 V76A（Tc）4V @ 250µA543W（Tc）-55°C ~ 150°C（TJ）通孔

Overview

The SupreMOS® MOSFET is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Features

SupreMOS™ Series
Tube Package
MOSFET (Metal Oxide) Technology
600 V Drain to Source Voltage (Vdss)
76A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
36mOhm @ 38A, 10V Rds On (Max) @ Id, Vgs
4V @ 250µA Vgs(th) (Max) @ Id
285 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
12385 pF @ 100 V Input Capacitance (Ciss) (Max) @ Vds
543W (Tc) Power Dissipation (Max)
Through Hole Mounting Type