联系我们
中文
EMH1303-TL-E

ON EMH1303-TL-E

P 通道12 V7A(Ta)表面贴装型

比较
onsemi
EMH1303-TL-E
MOSFET P-CH 12V 7A EMH8
paypalvisamastercarddiscover
upsdhlsf
比较

¥1.80

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The EMH11T2R is TRANS 2NPN PREBIAS 0.15W EMT6, that includes EMH11 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-563, SOT-666, Mounting Type is designed to work in Surface Mount, as well as the EMT6 Supplier Device Package, the device can also be used as Dual Configuration. In addition, the Power Max is 150mW, the device is offered in 2 NPN - Pre-Biased (Dual) Transistor Type, the device has a 100mA of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 50V, and the Resistor Base R1 Ohms is 10k, and Resistor Emitter Base R2 Ohms is 10k, and the DC Current Gain hFE Min Ic Vce is 30 @ 5mA, 5V, and Vce Saturation Max Ib Ic is 300mV @ 500μA, 10mA, and the Current Collector Cutoff Max is 500nA, and Frequency Transition is 250MHz, and the Pd Power Dissipation is 150 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 50 V, and the Transistor Polarity is NPN, and Continuous Collector Current is 100 mA, and the DC Collector Base Gain hfe Min is 30, and Typical Input Resistor is 10 kOhms, and the Typical Resistor Ratio is 1, and Peak DC Collector Current is 100 mA.

EMH1301-TL-E with circuit diagram manufactured by SANYO. The EMH1301-TL-E is available in EMH8 Package, is part of the IC Chips.

Features

Tape & Reel (TR) Package
a 12V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications


There are a lot of Rochester Electronics, LLC
EMH1303-TL-E applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
产品属性
全选
包装: 卷带(TR)
部件状态: 停产
FET 类型: P 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 12 V
25°C 时电流 - 连续漏极 (Id): 7A(Ta)
漏极电流和栅极至源极电压下的最大导通电阻: 23 毫欧 @ 6A,4.5V
最大栅极电荷 (Qg) @ Vgs: 12 nC @ 4.5 V
Vds 时的最大输入电容 (Ciss): 1100 pF @ 6 V
安装类型: 表面贴装型
供应商器件封装: 8-EMH
封装/外壳: 8-SMD,扁平引线
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z