ON BSS84-H

P 通道50 V130mA（Ta）2V @ 1mA360mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

Description This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.

Features ♦-0.13 A, -50 V, RDS(ON) = 10 Ωat VGS= -5 V ♦Voltage-Controlled P-Channel Small-SignalSwitch ♦High-Density Cell Design for Low RDS(ON) ♦High Saturation Current

Features

Tape & Reel (TR) Package
MOSFET (Metal Oxide) Technology
50 V Drain to Source Voltage (Vdss)
130mA (Ta) Current - Continuous Drain (Id) @ 25°C
5V Drive Voltage (Max Rds On, Min Rds On)
10Ohm @ 100mA, 5V Rds On (Max) @ Id, Vgs
2V @ 1mA Vgs(th) (Max) @ Id
1.3 nC @ 5 V Gate Charge (Qg) (Max) @ Vgs
±20V Vgs (Max)
73 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
360mW (Ta) Power Dissipation (Max)
Surface Mount Mounting Type