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2SK3702

ON 2SK3702

N 通道60 V18A(Ta)2W(Ta),20W(Tc)150°C(TJ)通孔

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onsemi
2SK3702
MOSFET N-CH 60V 18A TO220ML
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¥1.47

价格更新:一个月前

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产品详情

Overview

The 2SK3700(F) is MOSFET N-Ch 700V PWR FET ID 5A PD 150W 1150pF, that includes 2SK Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Package Case features such as TO-247-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 150 W, the device is offered in 5 A Id Continuous Drain Current, the device has a 900 V of Vds Drain Source Breakdown Voltage, and Rds On Drain Source Resistance is 2.5 Ohms, and the Transistor Polarity is N-Channel.

2SK3701 with circuit diagram manufactured by TOSHIBA. The 2SK3701 is available in TO-252 Package, is part of the IC Chips.

Features

Bulk Package
a 60V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of Rochester Electronics, LLC
2SK3702 applications of single MOSFETs transistors.

  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
产品属性
全选
包装: 散装
部件状态: 停产
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 18A(Ta)
漏极电流和栅极至源极电压下的最大导通电阻: 55mOhm @ 9A, 10V
最大栅极电荷 (Qg) @ Vgs: 19 nC @ 10 V
Vds 时的最大输入电容 (Ciss): 775 pF @ 20 V
最大功率耗散: 2W(Ta),20W(Tc)
工作温度: 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-220ML
封装/外壳: TO-220-3 整包
onsemi

onsemi

onsemi(前称ON Semiconductor)是一家全球领先的半导体供应商,致力于提供智能电源和传感技术。公司成立于1999年,总部位于美国亚利桑那州斯科茨代尔。onsemi的产品涵盖汽车、工业、电源管理和物联网等领域。

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