ON 2N7002ET1G

N 通道60 V260mA（Ta）2.5V @ 250µA300mW（Tj）-55°C ~ 150°C（TJ）表面贴装型

Overview

This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

Tape & Reel (TR) Package
a continuous drain current (ID) of 310mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 4.8 ns
a threshold voltage of 1V

Surface Mount Mounting Type

Applications

There are a lot of ON Semiconductor
2N7002ET1G applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies