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JANS1N5811

Microsemi JANS1N5811

标准150 V6A

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JANS1N5811
DIODE GEN PURP 150V 6A B AXIAL
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¥148.57

价格更新:一个月前

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产品详情

Overview

The JANS1N5809 is DIODE GEN PURP 100V 3A AXIAL, that includes Military, MIL-PRF-19500/477 Series, they are designed to operate with a Bulk Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as B, Axial, Mounting Type is designed to work in Through Hole, as well as the Fast Recovery = 200mA (Io) Speed, the device can also be used as Standard Diode Type. In addition, the Current Reverse Leakage Vr is 5μA @ 100V, the device is offered in 875mV @ 4A Voltage Forward Vf Max If, the device has a 100V of Voltage DC Reverse Vr Max, and Current Average Rectified Io is 3A, and the Reverse Recovery Time trr is 30ns, and Capacitance Vr F is 60pF @ 10V, 1MHz, it has an Operating Temperature Junction range of -65°C ~ 175°C.

The JANS1N5809US is Rectifiers Ultra Fast Rectifier (less than 100ns), that includes SMD/SMT Mounting Style, they are designed to operate with a D-5A-2 Package Case, Packaging is shown on datasheet note for use in a Bulk.

Features

Bulk Package
Standard Technology
150 V Voltage - DC Reverse (Vr) (Max)
6A Current - Average Rectified (Io)
875 mV @ 4 A Voltage - Forward (Vf) (Max) @ If
Fast Recovery =< 500ns, > 200mA (Io) Speed
30 ns Reverse Recovery Time (trr)
Through Hole Mounting Type
B, Axial Package / Case
B, Axial Supplier Device Package
产品属性
全选
型号系列: Military, MIL-PRF-19500/477
包装: 散装
部件状态: 在售
技术: 标准
最大直流反向电压: 150 V
平均整流电流 (Io): 6A
正向电流时的最大正向电压: 875 mV @ 4 A
速度: 快速恢复 =< 500ns,> 200mA(Io)
反向恢复时间 (trr): 30 ns
安装类型: 通孔
封装/外壳: B,轴向
供应商器件封装: B,轴向
结点工作温度: -65°C ~ 175°C
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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