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APT24M120B2

Microsemi APT24M120B2

N 通道1200 V24A(Tc)5V @ 2.5mA1040W(Tc)-55°C ~ 150°C(TJ)通孔

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APT24M120B2
MOSFET N-CH 1200V 24A T-MAX
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¥90.66

价格更新:一个月前

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产品详情

Overview

The APT24F50B is MOSFET Power FREDFET - MOS8, that includes Reel Packaging, they are designed to operate with a 1.340411 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-247-3, Technology is designed to work in Si, as well as the Single Configuration, the device can also be used as 335 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device has a 14 ns of Fall Time, and Rise Time is 19 ns, and the Vgs Gate Source Voltage is +/- 30 V, and Id Continuous Drain Current is 24 A, and the Vds Drain Source Breakdown Voltage is 500 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 240 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 41 ns, and Typical Turn On Delay Time is 16 ns, and the Qg Gate Charge is 90 nC, and Forward Transconductance Min is 17 S, and the Channel Mode is Enhancement.

The APT24F50S is MOSFET Power FREDFET - MOS8, that includes Si Technology.

Features

POWER MOS 8™ Series
a continuous drain current (ID) of 24A
the turn-off delay time is 145 ns
based on its rated peak drain current 90A.
a 1200V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
APT24M120B2 applications of single MOSFETs transistors.

  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
产品属性
全选
型号系列: POWER MOS 8™
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 1200 V
25°C 时电流 - 连续漏极 (Id): 24A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 630 毫欧 @ 12A,10V
漏极电流下的最大栅极阈值电压: 5V @ 2.5mA
最大栅极电荷 (Qg) @ Vgs: 260 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 8370 pF @ 25 V
最大功率耗散: 1040W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: T-MAX™ [B2]
封装/外壳: TO-247-3 变式
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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