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APT75M50B2

Microsemi APT75M50B2

N 通道500 V75A(Tc)5V @ 2.5mA1040W(Tc)-55°C ~ 150°C(TJ)通孔

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APT75M50B2
MOSFET N-CH 500V 75A T-MAX
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¥26.25

价格更新:一个月前

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产品详情

Overview

The APT75GT120JU2 is IGBT 1200V 100A 416W SOT227, that includes IGBT Silicon Modules Product, they are designed to operate with a Bulk Packaging, Unit Weight is shown on datasheet note for use in a 1.058219 oz, that offers Mounting Style features such as Screw, Tradename is designed to work in ISOTOP, as well as the ISOTOP Package Case, the device can also be used as Chassis Mount Mounting Type. In addition, the Supplier Device Package is SOT-227, the device is offered in Standard Input, the device has a Single of Configuration, and Power Max is 416W, and the Current Collector Ic Max is 100A, and Voltage Collector Emitter Breakdown Max is 1200V, and the Current Collector Cutoff Max is 5mA, and IGBT Type is Trench Field Stop, and the Vce on Max Vge Ic is 2.1V @ 15V, 75A, and Input Capacitance Cies Vce is 5.34nF @ 25V, and the NTC Thermistor is No, and Pd Power Dissipation is 416 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 1.2 kV, and Collector Emitter Saturation Voltage is 1.7 V, and the Continuous Collector Current at 25 C is 100 A, and Gate Emitter Leakage Current is 500 nA, and the Maximum Gate Emitter Voltage is +/- 20 V.

APT75GT12OJRDQ3 with circuit diagram manufactured by APT. The APT75GT12OJRDQ3 is available in MODULE Package, is part of the Module.

Features

Tube Package
a continuous drain current (ID) of 75A
the turn-off delay time is 120 ns

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
APT75M50B2 applications of single MOSFETs transistors.

  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
产品属性
全选
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 500 V
25°C 时电流 - 连续漏极 (Id): 75A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 75 毫欧 @ 37A,10V
漏极电流下的最大栅极阈值电压: 5V @ 2.5mA
最大栅极电荷 (Qg) @ Vgs: 290 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 11600 pF @ 25 V
最大功率耗散: 1040W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: T-MAX™
封装/外壳: TO-247-3 变式
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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