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APT75GP120JDQ3

Microsemi APT75GP120JDQ3

PT1200 V128 A543 W-55°C ~ 150°C(TJ)

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APT75GP120JDQ3
IGBT MOD 1200V 128A 543W ISOTOP
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¥129.60

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The APT75GP120B2G is IGBT 1200V 100A 1042W TMAX, that includes POWER MOS 7R Series, they are designed to operate with a Tube Packaging, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Tradename features such as POWER MOS 7 IGBT, Package Case is designed to work in TO-247-3 Variant, as well as the Standard Input Type, the device can also be used as Through Hole Mounting Type. In addition, the Configuration is Single, the device is offered in 1042W Power Max, the device has a 100A of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 1200V, and the IGBT Type is PT, and Current Collector Pulsed Icm is 300A, and the Vce on Max Vge Ic is 3.9V @ 15V, 75A, and Switching Energy is 1620μJ (on), 2500μJ (off), and the Gate Charge is 320nC, and Td on off 25°C is 20ns/163ns, and the Test Condition is 600V, 75A, 5 Ohm, 15V, and Pd Power Dissipation is 1.042 kW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 1.2 kV, and Collector Emitter Saturation Voltage is 3.3 V, and the Continuous Collector Current at 25 C is 100 A, and Gate Emitter Leakage Current is 100 nA, and the Maximum Gate Emitter Voltage is 30 V, and Continuous Collector Current Ic Max is 100 A.

APT75GP120JDF3 with circuit diagram manufactured by APT. The APT75GP120JDF3 is available in MODULE Package, is part of the Module.

Features

POWER MOS 7® Series

• Low Conduction Loss 

• 50 kHz operation @ 800V, 20A

• Low Gate Charge 

• 20 kHz operation @ 800V, 44A

• Ultrafast Tail Current shutoff 


ISOTOP® Supplier Device Package

Applications

• CCD Clock for VTR Camera

• Equipment Connected to PCs

• Low Profile Equipment

• Computers and Peripherals

• Lower Cost Crystal Oscillator Replacement

• Portable Electronics (MP3 Players, Games)

• Consumer Electronics such as TV’s, DVR’s, etc.


产品属性
全选
型号系列: POWER MOS 7®
包装: 管件
部件状态: 在售
IGBT 类型: PT
配置: 单路
最大集电极-发射极击穿电压: 1200 V
集电极电流 (Ic)(最大值): 128 A
最大功率: 543 W
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 3.9V @ 15V,75A
电流 - 集电极截止(最大值): 1.25 mA
Vce 时的输入电容 (Cies): 7.04 nF @ 25 V
输入: 标准
NTC 热敏电阻: 无
工作温度: -55°C ~ 150°C(TJ)
安装类型: 底座安装
封装/外壳: ISOTOP
供应商器件封装: ISOTOP®
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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