联系我们
中文
APT65GP60JDQ2

Microchip APT65GP60JDQ2

PT600 V130 A431 W

比较
APT65GP60JDQ2
IGBT 600V 130A 431W SOT227
paypalvisamastercarddiscover
upsdhlsf
比较

¥43.20

价格更新:一个月前

博斯克质量保证

912ob9001 201514001 201545001 201813485 2016esdduns
产品详情

Overview

The APT64GA90LD30 is IGBT 900V 117A 500W TO-264, that includes POWER MOS 8? Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 0.373904 oz, that offers Mounting Style features such as Through Hole, Tradename is designed to work in POWER MOS 8, as well as the TO-264-3, TO-264AA Package Case, the device can also be used as Standard Input Type. In addition, the Mounting Type is Through Hole, the device is offered in TO-264 [L] Supplier Device Package, the device has a Single of Configuration, and Power Max is 500W, and the Current Collector Ic Max is 117A, and Voltage Collector Emitter Breakdown Max is 900V, and the IGBT Type is PT, and Current Collector Pulsed Icm is 193A, and the Vce on Max Vge Ic is 3.1V @ 15V, 38A, and Switching Energy is 1192μJ (on), 1088μJ (off), and the Gate Charge is 162nC, and Td on off 25°C is 18ns/131ns, and the Test Condition is 600V, 38A, 4.7 Ohm, 15V, and Pd Power Dissipation is 500 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 900 V, and Collector Emitter Saturation Voltage is 2.5 V, and the Continuous Collector Current at 25 C is 117 A, and Gate Emitter Leakage Current is 100 nA, and the Maximum Gate Emitter Voltage is 30 V, and Continuous Collector Current Ic Max is 117 A.

The APT65GP60J is IGBT 600V 130A 431W SOT227, that includes Single Configuration, they are designed to operate with a 1mA Current Collector Cutoff Max, Current Collector Ic Max is shown on datasheet note for use in a 130A, that offers IGBT Type features such as PT, Input is designed to work in Standard, as well as the 7.4nF @ 25V Input Capacitance Cies Vce, the device can also be used as Chassis Mount Mounting Type. In addition, the NTC Thermistor is No, the device is offered in SOT-227-4, miniBLOC Package Case, the device has a 431W of Power Max, and Series is POWER MOS 7R, and the Supplier Device Package is ISOTOPR, and Vce on Max Vge Ic is 2.7V @ 15V, 65A, and the Voltage Collector Emitter Breakdown Max is 600V.

Features

POWER MOS 7® Series
Tube Package
PT IGBT Type
Single Configuration
600 V Voltage - Collector Emitter Breakdown (Max)
130 A Current - Collector (Ic) (Max)
431 W Power - Max
2.7V @ 15V, 65A Vce(on) (Max) @ Vge, Ic
1.25 mA Current - Collector Cutoff (Max)
7.4 nF @ 25 V Input Capacitance (Cies) @ Vce
Standard Input
No NTC Thermistor
Chassis Mount Mounting Type
ISOTOP Package / Case
ISOTOP® Supplier Device Package
产品属性
全选
型号系列: POWER MOS 7®
包装: 管件
部件状态: 在售
IGBT 类型: PT
配置: 单路
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 130 A
最大功率: 431 W
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.7V @ 15V,65A
电流 - 集电极截止(最大值): 1.25 mA
Vce 时的输入电容 (Cies): 7.4 nF @ 25 V
输入: 标准
NTC 热敏电阻: 无
安装类型: 底座安装
封装/外壳: ISOTOP
供应商器件封装: ISOTOP®
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

实时新闻

博斯克数字

收入: 85M

2022年的收入为8500万美元,与2021年增长63%。

国家: 105

博斯克服务全球105个国家的客户。

配件发货: 25M+

我们在过去的五年中发货了2.5亿个配件,比前五年增长148%。

制造商: 950

2022年,博斯克从近950个制造商售卖了配件。

所有产品零件号 0 - Z