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TN2106N3-G

Microchip TN2106N3-G

N 通道60 V300mA(Tj)2V @ 1mA740mW(Tc)-55°C ~ 150°C(TJ)通孔

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TN2106N3-G
MOSFET N-CH 60V 300MA TO92-3
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¥4.20

价格更新:一个月前

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产品详情

Overview

The TN2106K1-G is MOSFET N-CH 60V 280MA SOT23-3, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a 0.050717 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-236-3, SC-59, SOT-23-3, Technology is designed to work in Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 1 Channel, the device is offered in TO-236AB (SOT23) Supplier Device Package, the device has a Single of Configuration, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 360mW, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 60V, and Input Capacitance Ciss Vds is 50pF @ 25V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 280mA (Tj), and the Rds On Max Id Vgs is 2.5 Ohm @ 500mA, 10V, and Vgs th Max Id is 2V @ 1mA, and the Pd Power Dissipation is 360 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 5 ns, and the Rise Time is 5 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 280 mA, and Vds Drain Source Breakdown Voltage is 60 V, and the Rds On Drain Source Resistance is 2.5 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 6 ns, and Typical Turn On Delay Time is 3 ns, and the Channel Mode is Enhancement.

TN2106K1 with EDA / CAD Models manufactured by SUPERTEX. The TN2106K1 is available in SOT-23 Package, is part of the FETs - Single.

Features

Bag Package
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 6 ns

Through Hole Mounting Type

Applications


There are a lot of Microchip Technology
TN2106N3-G applications of single MOSFETs transistors.

  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
产品属性
全选
包装: 袋
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 60 V
25°C 时电流 - 连续漏极 (Id): 300mA(Tj)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 2.5 欧姆 @ 500mA,10V
漏极电流下的最大栅极阈值电压: 2V @ 1mA
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 50 pF @ 25 V
最大功率耗散: 740mW(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-92-3
封装/外壳: TO-226-3,TO-92-3 标准主体(!--TO-226AA)
Microchip Technology

Microchip Technology

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