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DN2540N3-G

Microchip DN2540N3-G

N 通道400 V120mA(Tj)1W(Tc)-55°C ~ 150°C(TJ)通孔

比较
DN2540N3-G
MOSFET N-CH 400V 120MA TO92
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¥7.73

价格更新:一个月前

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产品详情

Overview

The DN2535N5-G is MOSFET 350V 25Ohm, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 15 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 20 ns, and Rise Time is 15 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 500 mA, and the Vds Drain Source Breakdown Voltage is 350 V, and Rds On Drain Source Resistance is 25 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 15 ns, and the Typical Turn On Delay Time is 10 ns, and Channel Mode is Depletion.

The DN2535N5 is MOSFET N-CH 350V 500MA TO220-3 manufactured by SI. The DN2535N5 is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 350V 500MA TO220-3, Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220.

Features

Bag Package
a continuous drain current (ID) of 120mA
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 15 ns

Through Hole Mounting Type

Applications


There are a lot of Microchip Technology
DN2540N3-G applications of single MOSFETs transistors.

  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
产品属性
全选
包装: 袋
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 400 V
25°C 时电流 - 连续漏极 (Id): 120mA(Tj)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 0V
漏极电流和栅极至源极电压下的最大导通电阻: 25 欧姆 @ 120mA,0V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 300 pF @ 25 V
FET 功能: 耗尽模式
最大功率耗散: 1W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-92(TO-226)
封装/外壳: TO-226-3,TO-92-3 标准主体(!--TO-226AA)
Microchip Technology

Microchip Technology

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