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VN2460N8-G

Microchip VN2460N8-G

N 通道600 V200mA(Tj)4V @ 2mA1.6W(Ta)-55°C ~ 150°C(TJ)表面贴装型

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VN2460N8-G
MOSFET N-CH 600V 200MA TO243AA
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¥38.00

价格更新:一个月前

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产品详情

Overview

VN2460N3-G-P014 with pin details, that includes Ammo Pack Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-92-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 1 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 20 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 160 mA, and the Vds Drain Source Breakdown Voltage is 600 V, and Rds On Drain Source Resistance is 25 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 25 ns, and the Typical Turn On Delay Time is 10 ns, and Channel Mode is Enhancement.

VN2460N3-G P005 with circuit diagram, that includes Enhancement Channel Mode, they are designed to operate with a 160 mA Id Continuous Drain Current, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Number of Channels features such as 1 Channel, Package Case is designed to work in TO-92-3, as well as the Reel Packaging, the device can also be used as 25 Ohms Rds On Drain Source Resistance. In addition, the Technology is Si, the device is offered in N-Channel Transistor Polarity, the device has a 1 N-Channel of Transistor Type, and Unit Weight is 0.016000 oz, and the Vds Drain Source Breakdown Voltage is 600 V.

Features

Tape & Reel (TR) Package
a continuous drain current (ID) of 160mA
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 25 ns

Surface Mount Mounting Type

Applications


There are a lot of Microchip Technology
VN2460N8-G applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
产品属性
全选
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 600 V
25°C 时电流 - 连续漏极 (Id): 200mA(Tj)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 4.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 20 欧姆 @ 100mA,10V
漏极电流下的最大栅极阈值电压: 4V @ 2mA
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 150 pF @ 25 V
最大功率耗散: 1.6W(Ta)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: TO-243AA(SOT-89)
封装/外壳: TO-243AA
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

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