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VN2410L-G

Microchip VN2410L-G

N 通道240 V190mA(Tj)2V @ 1mA1W(Tc)-55°C ~ 150°C(TJ)通孔

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VN2410L-G
MOSFET N-CH 240V 190MA TO92-3
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¥10.80

价格更新:一个月前

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产品详情

Overview

VN2406L-G P013 with pin details, that includes Reel Packaging, they are designed to operate with a 0.016000 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-92-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 1 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 24 ns, and Rise Time is 8 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 190 mA, and the Vds Drain Source Breakdown Voltage is 240 V, and Rds On Drain Source Resistance is 10 Ohms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 23 ns, and the Typical Turn On Delay Time is 8 ns, and Channel Mode is Enhancement.

VN2406L-G P005 with circuit diagram, that includes Enhancement Channel Mode, they are designed to operate with a 190 mA Id Continuous Drain Current, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Number of Channels features such as 1 Channel, Package Case is designed to work in TO-92-3, as well as the Reel Packaging, the device can also be used as 10 Ohms Rds On Drain Source Resistance. In addition, the Technology is Si, the device is offered in N-Channel Transistor Polarity, the device has a 1 N-Channel of Transistor Type, and Unit Weight is 0.016000 oz, and the Vds Drain Source Breakdown Voltage is 240 V.

Features

Bag Package
a continuous drain current (ID) of 190mA
a drain-to-source breakdown voltage of 240V voltage
the turn-off delay time is 23 ns

Through Hole Mounting Type

Applications


There are a lot of Microchip Technology
VN2410L-G applications of single MOSFETs transistors.

  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
产品属性
全选
包装: 袋
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 240 V
25°C 时电流 - 连续漏极 (Id): 190mA(Tj)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 2.5V,10V
漏极电流和栅极至源极电压下的最大导通电阻: 10 欧姆 @ 500mA,10V
漏极电流下的最大栅极阈值电压: 2V @ 1mA
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 125 pF @ 25 V
最大功率耗散: 1W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: TO-92-3
封装/外壳: TO-226-3,TO-92-3 标准主体(!--TO-226AA)
Microchip Technology

Microchip Technology

Microchip Technology是一家全球领先的半导体供应商,成立于1989年,总部位于美国亚利桑那州钱德勒。公司专注于提供微控制器、混合信号、模拟和闪存IP解决方案,服务于广泛的嵌入式控制应用市场。

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