Microchip DN1509K1-G

N 通道90 V200mA（Tj）490mW（Ta）-55°C ~ 150°C（TJ）表面贴装型

Overview

This low threshold, depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure andwell proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Features

Tape & Reel (TR) Package
a continuous drain current (ID) of 200mA
a 90V drain to source voltage (Vdss)

Surface Mount Mounting Type

Applications

There are a lot of Microchip Technology
DN1509K1-G applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies