Microchip APT60GF120JRD

NPT1200 V115 A521 W-55°C ~ 150°C（TJ）

Overview

The APT60GA60JD60 is IGBT 600V 112A 356W SOT-227, that includes POWER MOS 8? Series, they are designed to operate with a IGBT Silicon Modules Product, Unit Weight is shown on datasheet note for use in a 1.058219 oz, that offers Mounting Style features such as Screw, Tradename is designed to work in POWER MOS 8 ISOTOP, as well as the SOT-227-4, miniBLOC Package Case, the device can also be used as Chassis Mount Mounting Type. In addition, the Supplier Device Package is ISOTOPR, the device is offered in Standard Input, the device has a Single of Configuration, and Power Max is 356W, and the Current Collector Ic Max is 112A, and Voltage Collector Emitter Breakdown Max is 600V, and the Current Collector Cutoff Max is 275μA, and IGBT Type is PT, and the Vce on Max Vge Ic is 2.5V @ 15V, 62A, and Input Capacitance Cies Vce is 8.01nF @ 25V, and the NTC Thermistor is No, and Pd Power Dissipation is 356 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 600 V, and Collector Emitter Saturation Voltage is 2 V, and the Continuous Collector Current at 25 C is 112 A, and Gate Emitter Leakage Current is 100 nA, and the Maximum Gate Emitter Voltage is +/- 30 V.

APT60GF120 with circuit diagram manufactured by APT. The APT60GF120 is available in MODULE Package, is part of the Module.

Features

Tube Package
NPT IGBT Type
Single Configuration
1200 V Voltage - Collector Emitter Breakdown (Max)
115 A Current - Collector (Ic) (Max)
521 W Power - Max
3.4V @ 15V, 60A Vce(on) (Max) @ Vge, Ic
500 mA Current - Collector Cutoff (Max)
7.08 nF @ 25 V Input Capacitance (Cies) @ Vce
Standard Input
No NTC Thermistor
Chassis Mount Mounting Type