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APT20M38SVRG

Microsemi APT20M38SVRG

N 通道200 V67A(Tc)4V @ 1mA370W(Tc)-55°C ~ 150°C(TJ)表面贴装型

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APT20M38SVRG
MOSFET N-CH 200V 67A D3PAK
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¥207.00

价格更新:2025-03-05

博斯克质量保证

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产品详情

Overview

The APT20M38SVFRG is MOSFET Power FREDFET - MOS5, that includes 0.139332 oz Unit Weight, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a TO-252-3, that offers Technology features such as Si, Configuration is designed to work in Single, as well as the 370 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device is offered in 10 ns Fall Time, the device has a 21 ns of Rise Time, and Vgs Gate Source Voltage is +/- 30 V, and the Id Continuous Drain Current is 67 A, and Vds Drain Source Breakdown Voltage is 200 V, and the Vgs th Gate Source Threshold Voltage is 4 V, and Rds On Drain Source Resistance is 38 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 48 ns, and the Typical Turn On Delay Time is 14 ns, and Qg Gate Charge is 148 nC, and the Channel Mode is Enhancement.

The APT20M38SVFR is MOSFET N-CH 200V 67A D3PAK manufactured by APT. The APT20M38SVFR is available in TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Package, is part of the FETs - Single, , and with support for MOSFET N-CH 200V 67A D3PAK.

Features

POWER MOS V® Series
a continuous drain current (ID) of 67A
the turn-off delay time is 48 ns
based on its rated peak drain current 268A.

D3 [S] Supplier Device Package

Applications


There are a lot of Microsemi Corporation
APT20M38SVRG applications of single MOSFETs transistors.

  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
产品属性
全选
型号系列: POWER MOS V®
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 200 V
25°C 时电流 - 连续漏极 (Id): 67A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 38 毫欧 @ 500mA,10V
漏极电流下的最大栅极阈值电压: 4V @ 1mA
最大栅极电荷 (Qg) @ Vgs: 225 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 6120 pF @ 25 V
最大功率耗散: 370W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 表面贴装型
供应商器件封装: D3 [S]
封装/外壳: TO-268-3,D³Pak(2 引线 + 接片),TO-268AA
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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