Infineon IPB017N10N5ATMA1

N 通道100 V180A（Tc）3.8V @ 279µA375W（Tc）-55°C ~ 175°C（TJ）表面贴装型

Overview

OptiMOS™ 5 100V power MOSFET IPB017N10N5ATMA1 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Features

• Ideal for high-frequency switching and sync. rec.

• Excellent gate charge xRDS (on)product(FOM)

• Very low on-resistance RDS(on)

• N-channel, normal level

• 100% avalanche tested

• Pb-free plating; RoHS compliant

• Halogen-freeaccordingtoIEC61249-2-21

Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial