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IPB64N25S320ATMA1

Infineon IPB64N25S320ATMA1

N 通道250 V64A(Tc)4V @ 270µA300W(Tc)-55°C ~ 175°C(TJ)表面贴装型

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IPB64N25S320ATMA1
MOSFET N-CH 250V 64A TO263-3
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¥42.00

价格更新:一个月前

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产品详情

Overview

The IPB64N25S3-20 is MOSFET N-Ch 250V 64A D2PAK-2, that includes IPB64N25 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a IPB64N25S320ATMA1 IPB64N25S320XT SP000876596, that offers Unit Weight features such as 0.139332 oz, Mounting Style is designed to work in SMD/SMT, as well as the TO-252-3 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 300 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 12 ns, and Rise Time is 20 ns, and the Id Continuous Drain Current is 64 A, and Vds Drain Source Breakdown Voltage is 250 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 20 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 45 ns, and the Typical Turn On Delay Time is 18 ns, and Qg Gate Charge is 67 nC, and the Channel Mode is Enhancement.

IP-B64-CV with circuit diagram manufactured by IP. The IP-B64-CV is available in MODULE Package, is part of the Module.

Features

OptiMOS™ Series


  • AEC qualified

  • 100% Avalanche tested

  • 175°C operating temperature

  • MSL1 up to 260°C peak reflow

  • N-channel - Enhancement mode

  • Green Product (RoHS compliant)



Surface Mount Mounting Type

Applications


  • Hybrid inverter


产品属性
全选
型号系列: OptiMOS™
包装: 卷带(TR)
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 250 V
25°C 时电流 - 连续漏极 (Id): 64A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 20 毫欧 @ 64A,10V
漏极电流下的最大栅极阈值电压: 4V @ 270µA
最大栅极电荷 (Qg) @ Vgs: 89 nC @ 10 V
最大栅极源电压: ±20V
Vds 时的最大输入电容 (Ciss): 7000 pF @ 25 V
最大功率耗散: 300W(Tc)
工作温度: -55°C ~ 175°C(TJ)
安装类型: 表面贴装型
供应商器件封装: PG-TO263-3-2
封装/外壳: TO-263-3,D²Pak(2 引线 + 接片),TO-263AB
Infineon Technologies

Infineon Technologies

Infineon Technologies是一家全球领先的半导体公司,成立于1999年,总部位于德国慕尼黑。公司专注于提供高性能的功率半导体、传感器和微控制器解决方案,服务于汽车、工业、电源管理和物联网等领域。

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