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APT50GT60BRDQ2G

Microsemi APT50GT60BRDQ2G

600 V110 A995µJ(开),1070µJ(关)-55°C ~ 150°C(TJ)TO-247-3

比较
APT50GT60BRDQ2G
IGBT 600V 110A 446W TO247
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¥108.00

价格更新:一个月前

博斯克质量保证

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产品详情

Overview

The APT50GT120LRDQ2G is IGBT 1200V 106A 694W TO264, that includes Thunderbolt IGBTR Series, they are designed to operate with a Tube Packaging, Package Case is shown on datasheet note for use in a TO-264-3, TO-264AA, that offers Input Type features such as Standard, Mounting Type is designed to work in Through Hole, as well as the TO-264 [L] Supplier Device Package, the device can also be used as 694W Power Max. In addition, the Current Collector Ic Max is 106A, the device is offered in 1200V Voltage Collector Emitter Breakdown Max, the device has a NPT of IGBT Type, and Current Collector Pulsed Icm is 150A, and the Vce on Max Vge Ic is 3.7V @ 15V, 50A, and Switching Energy is 2585μJ (on), 1910μJ (off), and the Gate Charge is 240nC, and Td on off 25°C is 23ns/215ns, and the Test Condition is 800V, 50A, 1 Ohm, 15V.

APT50GT60BRDQ1G with circuit diagram manufactured by APT. The APT50GT60BRDQ1G is available in TO-247 Package, is part of the IC Chips.

Features

Thunderbolt IGBT® Series
Tube Package
NPT IGBT Type
600 V Voltage - Collector Emitter Breakdown (Max)
110 A Current - Collector (Ic) (Max)
150 A Current - Collector Pulsed (Icm)
2.5V @ 15V, 50A Vce(on) (Max) @ Vge, Ic
446 W Power - Max
995µJ (on), 1070µJ (off) Switching Energy
Standard Input Type
240 nC Gate Charge
14ns/240ns Td (on/off) @ 25°C
400V, 50A, 5Ohm, 15V Test Condition
22 ns Reverse Recovery Time (trr)
Through Hole Mounting Type
产品属性
全选
型号系列: Thunderbolt IGBT®
包装: 管件
部件状态: 在售
IGBT 类型: NPT
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 110 A
电流 - 集电极脉冲 (Icm): 150 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 2.5V @ 15V,50A
最大功率: 446 W
开关能量: 995µJ(开),1070µJ(关)
输入类型: 标准
栅极电荷: 240 nC
25°C 时的开/关延迟时间: 14ns/240ns
测试条件: 400V,50A,5 欧姆,15V
反向恢复时间 (trr): 22 ns
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247 [B]
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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