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APT50GF120JRD

Microchip APT50GF120JRD

1200 V75 A460 W-55°C ~ 150°C(TJ)

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APT50GF120JRD
IGBT NPT COMBI 1200V 50A ISOTOP
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¥139.10

价格更新:一个月前

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产品详情

Overview

The APT50GF120B2RG is IGBT 1200V 135A 781W TMAX, that includes Tube Packaging, they are designed to operate with a TO-247-3 Variant Package Case, Input Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Through Hole, Power Max is designed to work in 781W, as well as the 135A Current Collector Ic Max, the device can also be used as 1200V Voltage Collector Emitter Breakdown Max. In addition, the IGBT Type is NPT, the device is offered in 150A Current Collector Pulsed Icm, the device has a 3V @ 15V, 50A of Vce on Max Vge Ic, and Switching Energy is 3.6mJ (on), 2.64mJ (off), and the Gate Charge is 340nC, and Td on off 25°C is 25ns/260ns, and the Test Condition is 800V, 50A, 1 Ohm, 15V.

The APT50GF120B2R is IGBT 1200V 135A 781W TMAX manufactured by APT. The APT50GF120B2R is available in TO-247-3 Variant Package, is part of the IGBTs - Single, , and with support for IGBT 1200V 135A 781W TMAX.

Features

Tube Package
Single Configuration
1200 V Voltage - Collector Emitter Breakdown (Max)
75 A Current - Collector (Ic) (Max)
460 W Power - Max
3.4V @ 15V, 50A Vce(on) (Max) @ Vge, Ic
750 µA Current - Collector Cutoff (Max)
3.45 nF @ 25 V Input Capacitance (Cies) @ Vce
Standard Input
No NTC Thermistor
Chassis Mount Mounting Type
产品属性
全选
包装: 管件
部件状态: 在售
配置: 单路
最大集电极-发射极击穿电压: 1200 V
集电极电流 (Ic)(最大值): 75 A
最大功率: 460 W
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 3.4V @ 15V,50A
电流 - 集电极截止(最大值): 750 µA
Vce 时的输入电容 (Cies): 3.45 nF @ 25 V
输入: 标准
NTC 热敏电阻: 无
工作温度: -55°C ~ 150°C(TJ)
安装类型: 底座安装
封装/外壳: SOT-227-4,miniBLOC
供应商器件封装: SOT-227(ISOTOP®)
Microchip Technology

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