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APT50GN60BDQ2G

Microsemi APT50GN60BDQ2G

600 V107 A1185µJ(开),1565µJ(关)-55°C ~ 175°C(TJ)TO-247-3

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APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
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¥105.00

价格更新:一个月前

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产品详情

Overview

The APT50GN120L2DQ2G is IGBT 1200V 134A 543W TO264, that includes Tube Packaging, they are designed to operate with a 0.373904 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-264-3, TO-264AA, Input Type is designed to work in Standard, as well as the Through Hole Mounting Type, the device can also be used as Single Configuration. In addition, the Power Max is 543W, the device is offered in 134A Current Collector Ic Max, the device has a 1200V of Voltage Collector Emitter Breakdown Max, and IGBT Type is NPT, Trench Field Stop, and the Current Collector Pulsed Icm is 150A, and Vce on Max Vge Ic is 2.1V @ 15V, 50A, and the Switching Energy is 4495μJ (off), and Gate Charge is 315nC, and the Td on off 25°C is 28ns/320ns, and Test Condition is 800V, 50A, 2.2 Ohm, 15V, and the Pd Power Dissipation is 543 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 1.2 kV, and the Collector Emitter Saturation Voltage is 1.7 V, and Continuous Collector Current at 25 C is 134 A, and the Gate Emitter Leakage Current is 600 nA, and Maximum Gate Emitter Voltage is 30 V, and the Continuous Collector Current Ic Max is 134 A.

The APT50GN60BDQ is IGBT 600V 107A 366W TO247 manufactured by APT. The APT50GN60BDQ is available in TO-247-3 Package, is part of the IGBTs - Single, , and with support for IGBT 600V 107A 366W TO247.

Features

Tube Package
Trench Field Stop IGBT Type
600 V Voltage - Collector Emitter Breakdown (Max)
107 A Current - Collector (Ic) (Max)
150 A Current - Collector Pulsed (Icm)
1.85V @ 15V, 50A Vce(on) (Max) @ Vge, Ic
366 W Power - Max
1185µJ (on), 1565µJ (off) Switching Energy
Standard Input Type
325 nC Gate Charge
20ns/230ns Td (on/off) @ 25°C
400V, 50A, 4.3Ohm, 15V Test Condition
Through Hole Mounting Type
产品属性
全选
包装: 管件
部件状态: 在售
IGBT 类型: 沟槽型场截止
最大集电极-发射极击穿电压: 600 V
集电极电流 (Ic)(最大值): 107 A
电流 - 集电极脉冲 (Icm): 150 A
栅极-发射极电压和集电极电流时的最大集电极-发射极导通电压: 1.85V @ 15V,50A
最大功率: 366 W
开关能量: 1185µJ(开),1565µJ(关)
输入类型: 标准
栅极电荷: 325 nC
25°C 时的开/关延迟时间: 20ns/230ns
测试条件: 400V,50A,4.3 欧姆,15V
工作温度: -55°C ~ 175°C(TJ)
安装类型: 通孔
封装/外壳: TO-247-3
供应商器件封装: TO-247 [B]
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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