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APT40M35JVR

Microchip APT40M35JVR

N 通道400 V93A(Tc)4V @ 5mA700W(Tc)-55°C ~ 150°C(TJ)底座安装

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APT40M35JVR
MOSFET N-CH 400V 93A SOT227
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¥123.50

价格更新:一个月前

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产品详情

Overview

The APT40GT60BRG is IGBT 600V 80A 345W TO247, that includes Thunderbolt IGBTR Series, they are designed to operate with a Tube Packaging, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Mounting Style features such as Through Hole, Tradename is designed to work in Thunderbolt IGBT, as well as the TO-247-3 Package Case, the device can also be used as Standard Input Type. In addition, the Mounting Type is Through Hole, the device is offered in TO-247 [B] Supplier Device Package, the device has a Single of Configuration, and Power Max is 345W, and the Current Collector Ic Max is 80A, and Voltage Collector Emitter Breakdown Max is 600V, and the IGBT Type is NPT, and Current Collector Pulsed Icm is 160A, and the Vce on Max Vge Ic is 2.5V @ 15V, 40A, and Switching Energy is 828μJ (off), and the Gate Charge is 200nC, and Td on off 25°C is 12ns/124ns, and the Test Condition is 400V, 40A, 5 Ohm, 15V, and Pd Power Dissipation is 345 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Collector Emitter Voltage VCEO Max is 600 V, and Collector Emitter Saturation Voltage is 2 V, and the Continuous Collector Current at 25 C is 80 A, and Gate Emitter Leakage Current is 100 nA, and the Maximum Gate Emitter Voltage is 30 V, and Continuous Collector Current Ic Max is 80 A.

The APT40M35JVFR is Discrete Semiconductor Modules Power FREDFET - MOS5 manufactured by APT. The APT40M35JVFR is available in MODULE Package, is part of the Module, , and with support for Discrete Semiconductor Modules Power FREDFET - MOS5, N-Channel 400V 93A (Tc) 700W (Tc) Chassis Mount ISOTOP?, Trans MOSFET N-CH 400V 93A 4-Pin SOT-227.

Features

POWER MOS V® Series
Tube Package
MOSFET (Metal Oxide) Technology
400 V Drain to Source Voltage (Vdss)
93A (Tc) Current - Continuous Drain (Id) @ 25°C
10V Drive Voltage (Max Rds On, Min Rds On)
35mOhm @ 46.5A, 10V Rds On (Max) @ Id, Vgs
4V @ 5mA Vgs(th) (Max) @ Id
1065 nC @ 10 V Gate Charge (Qg) (Max) @ Vgs
±30V Vgs (Max)
20160 pF @ 25 V Input Capacitance (Ciss) (Max) @ Vds
700W (Tc) Power Dissipation (Max)
Chassis Mount Mounting Type
产品属性
全选
型号系列: POWER MOS V®
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 400 V
25°C 时电流 - 连续漏极 (Id): 93A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 35 毫欧 @ 46.5A,10V
漏极电流下的最大栅极阈值电压: 4V @ 5mA
最大栅极电荷 (Qg) @ Vgs: 1065 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 20160 pF @ 25 V
最大功率耗散: 700W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 底座安装
供应商器件封装: SOT-227(ISOTOP®)
封装/外壳: SOT-227-4,miniBLOC
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