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APT38F80B2

Microsemi APT38F80B2

N 通道800 V41A(Tc)5V @ 2.5mA1040W(Tc)-55°C ~ 150°C(TJ)通孔

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APT38F80B2
MOSFET N-CH 800V 41A T-MAX
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¥4.80

价格更新:一个月前

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产品详情

Overview

About MicrosemiMicrosemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services.Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com.

IGBTs from MicrosemiIGBT products from Microsemi provide high quality solutions for a wide range of high voltage, high power applications. The switching frequency range spans from DC for minimal conduction loss to over 100kHz for very high power density SMPS applications. The frequency range for each product type is shown in the graph below. Each IGBT product represents the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six product series that utilize three different IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and Field Stop.

Features

POWER MOS 8™ Series
a continuous drain current (ID) of 41A
the turn-off delay time is 200 ns
a 800V drain to source voltage (Vdss)

Through Hole Mounting Type

Applications


There are a lot of Microsemi Corporation
APT38F80B2 applications of single MOSFETs transistors.

  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
产品属性
全选
型号系列: POWER MOS 8™
包装: 管件
部件状态: 在售
FET 类型: N 通道
技术: MOSFET(金属氧化物)
漏源电压(Vdss): 800 V
25°C 时电流 - 连续漏极 (Id): 41A(Tc)
最大驱动电压(Rds 开启),最小驱动电压(Rds 开启): 10V
漏极电流和栅极至源极电压下的最大导通电阻: 240 毫欧 @ 20A,10V
漏极电流下的最大栅极阈值电压: 5V @ 2.5mA
最大栅极电荷 (Qg) @ Vgs: 260 nC @ 10 V
最大栅极源电压: ±30V
Vds 时的最大输入电容 (Ciss): 8070 pF @ 25 V
最大功率耗散: 1040W(Tc)
工作温度: -55°C ~ 150°C(TJ)
安装类型: 通孔
供应商器件封装: T-MAX™ [B2]
封装/外壳: TO-247-3 变式
Microsemi Corporation

Microsemi Corporation

Microsemi Corporation是一家提供高性能半导体和系统解决方案的公司,专注于通信、国防与安全、航空和工业市场。公司成立于1959年,总部位于美国加利福尼亚州阿利索维耶荷。Microsemi于2018年被Microchip Technology收购。

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